Photoluminescence, Semiconductor doping, Wide gap semiconductors, Nanowires
Bulk-scale synthetic methods for preparing doped tin oxide (SnO2) nanowires (NWs) are presented. n-and p-doping is achieved through insertion of Antimony and Lithium in tin oxide lattice, respectively. We also present a comparison of the structural and optical properties of SnO2 nanoparticles (NPs), and SnO2 NWs. Both n-type and p- type NWs display a characteristic red shift in their photoluminescence (PL) spectra. Surface plasmons observed in these systems imply high carrier concentrations. These corrosion resistant materials are useful in fabricating ultra-sensitive gas detectors and transparent electronics.
Tran, Hoang and Rananavare, Shankar B., "Synthesis and Characterization of N- and P- Doped Tin Oxide Nanowires" (2011). Chemistry Faculty Publications and Presentations. 85.