Delay and Yield of CNFET-Based Circuits in the Presence of Variations
2015 IEEE Nanotechnology Materials and Devices Conference (NMDC)
The aggressive scaling of CMOS circuits is approaching the atomic and quantum physical limits , and therefore extensive research is being conducted on devices made with III-V and II-VI semiconductors, and with more exotic materials like grapheme, and various nanotubes.
Locate the Document
M. Chrzanowska-Jeske, "Delay and yield of CNFET-based circuits in the presence of variations," 2015 IEEE Nanotechnology Materials and Devices Conference (NMDC), Anchorage, AK, USA, 2015, pp. 1-2.