First Advisor

Lee W. Casperson

Term of Graduation

Winter 1995

Date of Publication

1-19-1995

Document Type

Thesis

Degree Name

Master of Science (M.S.) in Electrical and Computer Engineering

Department

Electrical Engineering

Language

English

Subjects

Electric distortion, Microwave amplifiers, Volterra series

DOI

10.15760/etd.6865

Physical Description

1 online resource (2, viii, 89 pages)

Abstract

Using the nonlinear Volterra series representation, analytical expressions for the third-order intermodulation distortion power and intercept point for a MESFET small-signal amplifier are derived when its equivalent circuit is bilateral and includes the gate-to-drain capacitance (Cgd) explicitly as a nonlinear element. Previously developed analytical expressions treated Cgd as a linear element or incorporated it as part of gate-to-source and drainto- source capacitances (Cgs and Cds). These new analytical expressions are then compared with experimental data and good agreement is obtained. The analytical expressions are also used to study the variation of intermodulation distortion with input power, frequency, and source and load impedances. It is shown that the nonlinearity of Cgd contributes significantly to the intermodulation distortion power and the third-order intercept point and therefore should not be neglected in the analysis and design.

Rights

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Comments

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Persistent Identifier

https://archives.pdx.edu/ds/psu/29255

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