Published In

Applied Physics Letters

Document Type

Article

Publication Date

8-1-2009

Subjects

Nanostructured materials, Quantum electronics, Semiconductor doping

Abstract

We report the deposition of conformal thin layers of 10?50 nm thickness from II-VI quantum dot suspensions on ZnO nanowire substrates. Smooth polycrystalline films of high electronic quality can be obtained from CdSe quantum dots after annealing at moderate temperatures. The electronic properties are adequate for detector and solar cell applications. The growth and annealing temperatures permit deposition on light-weight and flexible substrates. Some elemental diffusion of Se across the CdSe/ZnO interface occurs in the film formation. A comparison with CdS/ZnO junctions indicates that the low Se diffusion rates are essential for efficient charge transfer.

Description

This is the publisher's final pdf. Article appears in Applied Physics Letters (http://apl.aip.org/) and is copyrighted (2009) by the American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

DOI

10.1063/1.3193531

Persistent Identifier

http://archives.pdx.edu/ds/psu/7253

Included in

Physics Commons

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