Published In

Applied Physics Letters

Document Type

Article

Publication Date

1-1-1997

Subjects

Scanning electron microscopy, Electrons

Abstract

Characteristic rate variations of carrier processes are imaged using near-field scanning optical microscopy. We couple both a visible pump and an infrared probe light through a subwavelength aperture to investigate the interband recombination and intraband diffusion of excess carriers in oxidized silicon. Typical values of the locally measured life time constants agree well with those obtained by conventional space-averaged techniques. Moreover, the images locate defects, reveal variations, and can map the regions in which a recombination process is active.

Description

Article appears in Applied Physics Letters (http://apl.aip.org/) and is copyrighted (1997) by the American Institute of Physics, and can be found at: http://dx.doi.org/10.1063/1.118661. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

DOI

10.1063/1.118661

Persistent Identifier

http://archives.pdx.edu/ds/psu/7554

Included in

Physics Commons

Share

COinS