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Photoluminescence, Semiconductor doping, Wide gap semiconductors, Nanowires


Bulk-scale synthetic methods for preparing doped tin oxide (SnO2) nanowires (NWs) are presented. n-and p-doping is achieved through insertion of Antimony and Lithium in tin oxide lattice, respectively. We also present a comparison of the structural and optical properties of SnO2 nanoparticles (NPs), and SnO2 NWs. Both n-type and p- type NWs display a characteristic red shift in their photoluminescence (PL) spectra. Surface plasmons observed in these systems imply high carrier concentrations. These corrosion resistant materials are useful in fabricating ultra-sensitive gas detectors and transparent electronics.


This is an Author's Accepted Manuscript of an article published in Nanotechnology. © 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. This article was published in 2011 11th IEEE Conference on Nanotechnology (IEEE-NANO) and is available online at:



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