Work supported by ARPA through the Anny Research Office, Durham, N. C.
Applied Physics Letters
Semiconductor lasers, Xenon lasers
In lasers employing high‐gain narrow‐linewidth transitions the theory predicts major departures of the mode‐splitting frequencies from their low‐gain values as well as a new type of mode splitting. The first of these effects consisting of a reduction by a factor of 2.5 of the mode splitting in a xenon 3.51‐μ laser is observed experimentally.
Casperson, L. W. and Yariv, A. (1970). Applied Physics Letters. 17 (6) 259-261.