A Linear High Efficiency Doherty Amplifier with 40 dBm Sauturated Output Power using GaN on SiC HEMT Devices
Published In
Power Amplifiers for Wireless and Radio Applications (PAWR), 2015 IEEE Topical Conference on
Document Type
Citation
Publication Date
1-2015
Subjects
Power amplifiers -- Design and construction, Microwave amplifiers -- Design and construction, Gallium compounds
Abstract
This paper describes the design of a linear high efficiency Doherty power amplifier using TriQuint's 2nd generation Gallium Nitride (GaN) on Silicon Carbide (SiC) T1G6001032-SM. The device was designed for an operating frequency of 3.6 GHz with a 40 dBm saturated output power, and achieves a power added efficiency (PAE) of 60.5% and 52.5% with 6 dB power backed-off (PBO). Advanced Design Systems (ADS) simulation software, in conjunction with Modelithic's active and passive device models, were used throughout the design process and are evaluated against measured results. The use of these device models demonstrates a successful first-pass design, putting less dependence on empirical load-pull analysis, thereby decreasing design-cycle time to market.
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Unaffiliated researchers can access the work here: http://dx.doi.org/10.1109/PAWR.2015.7139215
DOI
10.1109/PAWR.2015.7139215
Persistent Identifier
http://archives.pdx.edu/ds/psu/16638
Citation Details
Baker, Bryant, and Richard Campbell. "A linear high efficiency doherty amplifier with 40 dBm saturated output power using GaN on SiC HEMT devices." Power Amplifiers for Wireless and Radio Applications (PAWR), 2015 IEEE Topical Conference on. IEEE, 2015. DOI 10.1109/PAWR.2015.7139215
Description
© 2015 IEEE