Evaluation of the Operation of Depletion-Mode SiC Power JFET in DC-DC Converter Applications

Published In

International Convention on Information and Communication Technology, Electronics and Microelectronics

Document Type

Presentation

Publication Date

5-1-2014

Abstract

This paper presents the system for the evaluation of operation of a depletion-mode silicon carbide (SiC) power junction field-effect transistor (JFET). The main part of the system is a dc-dc step-down converter which represents realistic operating conditions for the switching devices in a synchronous buck configuration. In order to test the importance of the dead-time value on the operation and efficiency of the synchronous buck converter, a precise two-channel time-delay pulse signal generator is developed and its operation is described. The ability to precisely regulate control signal parameters of the high-side FET and low-side FET (switching voltage and current, operating frequency, duty cycle, dead-times, etc.) is needed in order to fully characterise SiC power switches. The functionality of the complete system is verified by measurements performed under various operating conditions.

DOI

10.1109/MIPRO.2014.6859547

Persistent Identifier

https://archives.pdx.edu/ds/psu/25863

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