Title

Investigation of Scaling of InSb MOSFETs Through Drift–Diffusion Simulation

Published In

Solid-State Electronics

Document Type

Citation

Publication Date

1-1-2006

Abstract

Models needed for drift–diffusion simulation of InSb MOSFETs in commercially available simulator are presented and applied to the problem of scaling of the exclusion/extraction InSb MOSFETs. Non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained and modeled. Leakage current and maximum unity current gain frequency of the exclusion/extraction MOSFET are examined and its scaling properties down to 0.15 lm are analyzed. Because of its high mobility and saturation velocity, InSb shows promise as a material for THz active devices operating at very low voltages, despite its low bandgap and resulting leakage currents.

DOI

10.1016/j.sse.2006.07.008

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