Published In

Nano Research

Document Type

Article

Publication Date

2025

Abstract

The electromechanical coupling effects in two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted great interest. However, for 2D TMDs, piezoelectricity is confined to the basal plane, and the flexoelectricity-derived out-of-plane electromechanical response is usually faint, limiting the applications of this material family using the out-of-plane electromechanical effects. Here, this work reports a facile strategy to greatly enhance the out-of-plane electromechanical response of hexagonal molybdenum disulfide (2H-MoS2) nanoflakes by stacking monolayer hexagonal boron nitride (h-BN) on 2H-MoS2 nanoflakes to form MoS2/BN heterostructures. The deff/33 coefficient of MoS2/BN can reach a value comparable to that of commonly used wurtzite bulk piezoelectric materials, such as AlN and GaN. The strong out-of-plane electromechanical response of MoS2/BN is due to the breaking of the out-of-plane structural symmetry. Kelvin probe force microscopy (KPFM) results show an increased effective work function of MoS2/BN, indicating polar-structure formation at the heterostructure interface, which also accounts for the enhanced out-of-plane piezoresponse. This study gives an insight into the role of heterostructure engineering in the electromechanical performances of 2D TMDs, and provides this material family an opportunity for applications using out-of-plane electromechanical effects.

Rights

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/ licenses/by/4.0/).

by

© The Author(s) 2025. Published by Tsinghua University

DOI

10.26599/NR.2025.94907050

Persistent Identifier

https://archives.pdx.edu/ds/psu/42941

Download

Share

COinS