Date of Award
Metal oxide semiconductors -- Design and construction, Metal oxide semiconductors -- Testing, Capacitors
Transistors form the backbone of digital devices, allowing for amplification and digital "switching" of electrical signals. One of the simplest devices is the Metal-Oxide-Semiconductor Capacitor (MOSCAP). The MOSCAP is analogous to a parallel plate capacitor with the Si wafer and metal layer corresponding to the positive and negative plates, and the oxide layer corresponding to the dielectric material. During the fabrication process it is likely that trapped charge impurities will become incorporated into the oxide layer of the MOSCAP. This thesis project will examine the effects of these charges on the capacitance and voltage characteristics of a MOSCAP.
George, August, "MOSCAP Oxide Charges" (2015). University Honors Theses. Paper 139.