Advisor

Hormoz Zarefar

Date of Award

1990

Document Type

Thesis

Degree Name

Master of Science (M.S.) in Mechanical Engineering

Department

Mechanical Engineering

Physical Description

1 online resource (57 p.)

Subjects

Semiconductors -- Thermal properties, Thermal stresses

DOI

10.15760/etd.6099

Abstract

The failure of integrated circuit due to Silicon fracture is one of the problems associated with the production of a semiconductor device. The thermal stresses, which result in die cracking, are for the most part induced during the cooling process after attaching the die with Gold-Silicon solder. Major factors for stress generation in material systems are commonly large temperature gradients and substantial difference in coefficients of thermal expansion.

Description

If you are the rightful copyright holder of this dissertation or thesis and wish to have it removed from the Open Access Collection, please submit a request to pdxscholar@pdx.edu and include clear identification of the work, preferably with URL

Persistent Identifier

http://archives.pdx.edu/ds/psu/24352

Share

COinS