Portland State University. Department of Mechanical Engineering
Date of Publication
Master of Science (M.S.) in Mechanical Engineering
Semiconductors -- Thermal properties, Thermal stresses
1 online resource (57 p.)
The failure of integrated circuit due to Silicon fracture is one of the problems associated with the production of a semiconductor device. The thermal stresses, which result in die cracking, are for the most part induced during the cooling process after attaching the die with Gold-Silicon solder. Major factors for stress generation in material systems are commonly large temperature gradients and substantial difference in coefficients of thermal expansion.
Duerr, Joachim Karl Wilhelm, "Finite element analysis of thermal stresses in semiconductor devices" (1990). Dissertations and Theses. Paper 4215.