Portland State University. Department of Mechanical Engineering
Date of Publication
Master of Science (M.S.) in Mechanical Engineering
Semiconductors -- Thermal properties, Thermal stresses
1 online resource (57 p.)
The failure of integrated circuit due to Silicon fracture is one of the problems associated with the production of a semiconductor device. The thermal stresses, which result in die cracking, are for the most part induced during the cooling process after attaching the die with Gold-Silicon solder. Major factors for stress generation in material systems are commonly large temperature gradients and substantial difference in coefficients of thermal expansion.
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Duerr, Joachim Karl Wilhelm, "Finite element analysis of thermal stresses in semiconductor devices" (1990). Dissertations and Theses. Paper 4215.