First Advisor

Paul Van Halen

Date of Publication

12-4-1992

Document Type

Thesis

Degree Name

Master of Science (M.S.) in Electrical Engineering

Department

Electrical Engineering

Language

English

Subjects

Semiconductors -- Junctions -- Mathematical models, Capacitors -- Mathematical models, Space charge -- Mathematical models

DOI

10.15760/etd.6473

Physical Description

1 online resource (viii, 60 p.)

Abstract

The classical capacitance voltage characteristics based on the depletion approximation, is adequate at reverse bias, but introduces errors at high forward bias. Because of its inherent simplicity and compactness this classical depletion model is well studied and widely used in circuit simulators. In this work, a new model for the semiconductor space charge region (SCR) capacitance, based on physical justification, will be derived. This new model takes three input parameters, C0 , Vbi and m, thus eliminating the fitting parameter FC currently used in SPICE. This new model is applicable for any applied voltage and will be compared with the SCR capacitance extracted from the numerical device simulator PISCES, and with the SCR capacitance models proposed by Gummel and Poon and by DeGraaff and Klaassen.

Rights

In Copyright. URI: http://rightsstatements.org/vocab/InC/1.0/ This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).

Comments

If you are the rightful copyright holder of this dissertation or thesis and wish to have it removed from the Open Access Collection, please submit a request to pdxscholar@pdx.edu and include clear identification of the work, preferably with URL

Persistent Identifier

https://archives.pdx.edu/ds/psu/26599

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