Date of Award

12-4-1992

Document Type

Thesis

Degree Name

Master of Science (M.S.) in Electrical Engineering

Department

Electrical Engineering

Physical Description

1 online resource (viii, 60 p.)

Subjects

Semiconductors -- Junctions -- Mathematical models, Capacitors -- Mathematical models, Space charge -- Mathematical models

Abstract

The classical capacitance voltage characteristics based on the depletion approximation, is adequate at reverse bias, but introduces errors at high forward bias. Because of its inherent simplicity and compactness this classical depletion model is well studied and widely used in circuit simulators. In this work, a new model for the semiconductor space charge region (SCR) capacitance, based on physical justification, will be derived. This new model takes three input parameters, C0 , Vbi and m, thus eliminating the fitting parameter FC currently used in SPICE. This new model is applicable for any applied voltage and will be compared with the SCR capacitance extracted from the numerical device simulator PISCES, and with the SCR capacitance models proposed by Gummel and Poon and by DeGraaff and Klaassen.

Description

If you are the rightful copyright holder of this dissertation or thesis and wish to have it removed from the Open Access Collection, please submit a request to pdxscholar@pdx.edu and include clear identification of the work, preferably with URL

Persistent Identifier

https://archives.pdx.edu/ds/psu/26599

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