First Advisor

Lee W. Casperson

Term of Graduation

Winter 1995

Date of Publication


Document Type


Degree Name

Master of Science (M.S.) in Electrical and Computer Engineering


Electrical Engineering




Electric distortion, Microwave amplifiers, Volterra series



Physical Description

1 online resource (2, viii, 89 pages)


Using the nonlinear Volterra series representation, analytical expressions for the third-order intermodulation distortion power and intercept point for a MESFET small-signal amplifier are derived when its equivalent circuit is bilateral and includes the gate-to-drain capacitance (Cgd) explicitly as a nonlinear element. Previously developed analytical expressions treated Cgd as a linear element or incorporated it as part of gate-to-source and drainto- source capacitances (Cgs and Cds). These new analytical expressions are then compared with experimental data and good agreement is obtained. The analytical expressions are also used to study the variation of intermodulation distortion with input power, frequency, and source and load impedances. It is shown that the nonlinearity of Cgd contributes significantly to the intermodulation distortion power and the third-order intercept point and therefore should not be neglected in the analysis and design.


In Copyright. URI: This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).


If you are the rightful copyright holder of this dissertation or thesis and wish to have it removed from the Open Access Collection, please submit a request to and include clear identification of the work, preferably with URL.

Persistent Identifier