This work was funded by the Army Research Laboratory through Oregon Nanoscience and Microtechnologies Institute.
Applied Physics Letters
Frequency multiplication in silicon and ZnO nanowire based Schottky and p-n diodes has been demonstrated at fundamental frequencies of 70 MHz and 500 MHz. Our motivation for using nanowires contacted at their tips was to minimize the spreading resistance and boundary capacitance in order to produce higher cut-off frequencies and conversion efficiencies compared to planar diodes. The data presented here are limited to the lower GHz range by the frequency response of the experimental apparatus. However, by employing microwave waveguides and higher fundamental source frequencies, it should be possible to reach much higher output frequencies with nanowire-based diodes.
Ghita, M., Godshalk, E., Goncher, G., & Solanki, R. (2011). Frequency multiplication in nanowires. [Article]. Applied Physics Letters, 99(15), 3.