Published In
Applied Physics Letters
Document Type
Article
Publication Date
4-1-1972
Subjects
Triodes, Thin films, Amorphous semiconductors
Abstract
A new thin‐film tunnel triode is discussed which uses a p‐type amorphous film to achieve amplification of injected current from a tunnel cathode. It is not only the basis for a new semiconductor device but also suggests a novel method for measuring electrical properties of semiconductors.
DOI
10.1063/1.1654128
Persistent Identifier
http://archives.pdx.edu/ds/psu/8371
Citation Details
Pavel, S., Shaw, R., Fritzsche, H., Silver, M., Holmberg, S., & Ovshinsky, S., New Thin‐Film Tunnel Triode Using Amorphous Semiconductors. Appl. Phys. Lett. 20, 241 (1972).
Description
This is the publisher's final PDF. Article appears in Applied Physics Letters (http://apl.aip.org/) and is copyrighted 1972 by the American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.