Portions of this work were supported by a grant from US-DOE Office of Basic Energy Research.
Journal of Applied Physics
Nanowires, Semiconductors, Particles (Nuclear physics)
We report the growth of single-crystalline ZnO nanowires on n- and p-type Si wafers by electrodeposition. On strongly doped n-type Si high-quality nanowires can be grown under similar conditions as used for metallic substrates. For low electron concentrations occurring in weakly n-type or in p-type wafers, nanowire growth is inhibited. This difference allows selective growth in strongly n-type areas. The inhibited growth on weakly n-type and p-type wafers can be improved by applying stronger cathodic electrode potentials or by illuminating the growth area. The wires on n-Si show efficient electroluminescence covering the visible and extending into the ultraviolet spectral range.
Könenkamp, R. R., Word, R. C., Dosmailov, M. M., Meiss, J. J., & Nadarajah, A. A. (2007). Selective growth of single-crystalline ZnO nanowires on doped silicon. Journal Of Applied Physics, 102(5), 056103.