This work was supported by U.S. Army Research Office Grant Nos. DAAH04-95-1-380 and DAAH04-93-G-0194.
Applied Physics Letters
Near-field microscopy, Silicon -- Defects, Silicon -- Electric properties, Semiconductors, Excess carriers (Solid state physics)
Characteristic rate variations of carrier processes are imaged using near-field scanning optical microscopy. We couple both a visible pump and an infrared probe light through a subwavelength aperture to investigate the interband recombination and intraband diffusion of excess carriers in oxidized silicon. Typical values of the locally measured life time constants agree well with those obtained by conventional space-averaged techniques. Moreover, the images locate defects, reveal variations, and can map the regions in which a recombination process is active.
La Rosa, A. H., Yakobson, B. I., & Hallen, H. D. (1997). Optical imaging of carrier dynamics in silicon with subwavelength resolution. Applied Physics Letters, 70(13), 1656.