Sponsor
This work was supported by U.S. Army Research Office Grant Nos. DAAH04-95-1-380 and DAAH04-93-G-0194.
Published In
Applied Physics Letters
Document Type
Article
Publication Date
1-1-1997
Subjects
Near-field microscopy, Silicon -- Defects, Silicon -- Electric properties, Semiconductors, Excess carriers (Solid state physics)
Abstract
Characteristic rate variations of carrier processes are imaged using near-field scanning optical microscopy. We couple both a visible pump and an infrared probe light through a subwavelength aperture to investigate the interband recombination and intraband diffusion of excess carriers in oxidized silicon. Typical values of the locally measured life time constants agree well with those obtained by conventional space-averaged techniques. Moreover, the images locate defects, reveal variations, and can map the regions in which a recombination process is active.
DOI
10.1063/1.118661
Persistent Identifier
http://archives.pdx.edu/ds/psu/7554
Citation Details
La Rosa, A. H., Yakobson, B. I., & Hallen, H. D. (1997). Optical imaging of carrier dynamics in silicon with subwavelength resolution. Applied Physics Letters, 70(13), 1656.
Description
Article appears in Applied Physics Letters (http://apl.aip.org/) and is copyrighted (1997) by the American Institute of Physics, and can be found at: http://dx.doi.org/10.1063/1.118661. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.