The electron microscopy work was carried out in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439. Two of the authors B.J. and J.M.Z. are supported by DOE BES DEFG02-01ER45923
Applied Physics Letters
Hafnium compounds, Amorphous semiconductors, Silicon crystals -- Research
The effects of rapid thermal annealing are reported here on the structure of 2 nm thick hafnium oxide films grown on silicon (100) substrates. The films grown by atomic layer deposition have a 1 nm SiO2 transition layer between silicon and the HfO2 layer. The amorphous structure of the as-deposited films is retained after annealing at 600°C. The HfO2 films crystallized into an orthorhombic phase with an out-of-plane texture after annealing at 800°C or higher. In contrast, films grown on thick amorphous SiO2 substrates crystallize without any texture. The authors attribute the texture of HfO2 on Si (100) to the role of interfacial SiO2 transition layer.
Bohra, F., Jiang, B., & Zuo, J. (2007). Textured crystallization of ultrathin hafnium oxide films on silicon substrate. Applied Physics Letters, 90(16), 161917