Published In

Applied Physics Letters

Document Type

Article

Publication Date

10-11-2011

Subjects

Nanowires, Silicon

Abstract

Frequency multiplication in silicon and ZnO nanowire based Schottky and p-n diodes has been demonstrated at fundamental frequencies of 70 MHz and 500 MHz. Our motivation for using nanowires contacted at their tips was to minimize the spreading resistance and boundary capacitance in order to produce higher cut-off frequencies and conversion efficiencies compared to planar diodes. The data presented here are limited to the lower GHz range by the frequency response of the experimental apparatus. However, by employing microwave waveguides and higher fundamental source frequencies, it should be possible to reach much higher output frequencies with nanowire-based diodes.

Description

This is the publisher's final pdf. Article appears in Applied Physics Letters (http://apl.aip.org/) and is copyrighted (2011) by the American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Persistent Identifier

http://archives.pdx.edu/ds/psu/7157

Included in

Physics Commons

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