Sponsor
Portions of this work were supported by a grant from US-DOE Office of Basic Energy Research.
Published In
Journal of Applied Physics
Document Type
Article
Publication Date
1-1-2007
Subjects
Nanowires, Semiconductors, Particles (Nuclear physics)
Abstract
We report the growth of single-crystalline ZnO nanowires on n- and p-type Si wafers by electrodeposition. On strongly doped n-type Si high-quality nanowires can be grown under similar conditions as used for metallic substrates. For low electron concentrations occurring in weakly n-type or in p-type wafers, nanowire growth is inhibited. This difference allows selective growth in strongly n-type areas. The inhibited growth on weakly n-type and p-type wafers can be improved by applying stronger cathodic electrode potentials or by illuminating the growth area. The wires on n-Si show efficient electroluminescence covering the visible and extending into the ultraviolet spectral range.
Rights
© 2007 American Institute of Physics
Locate the Document
DOI
10.1063/1.2777133
Persistent Identifier
http://archives.pdx.edu/ds/psu/7256
Citation Details
Könenkamp, R. R., Word, R. C., Dosmailov, M. M., Meiss, J. J., & Nadarajah, A. A. (2007). Selective growth of single-crystalline ZnO nanowires on doped silicon. Journal Of Applied Physics, 102(5), 056103.
Description
This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (R. Könenkamp, R. C. Word, M. Dosmailov, J. Meiss, A. Nadarajah, Selective growth of single-crystalline ZnO nanowires on doped Silicon. Journal of Applied Physics 102, 56103 (2007)) and may be found at (http://dx.doi.org/10.1063/1.2777133).