Published In

Journal of Applied Physics

Document Type

Article

Publication Date

1-1-2007

Subjects

Nanowires, Semiconductors, Particles (Nuclear physics)

Abstract

We report the growth of single-crystalline ZnO nanowires on n- and p-type Si wafers by electrodeposition. On strongly doped n-type Si high-quality nanowires can be grown under similar conditions as used for metallic substrates. For low electron concentrations occurring in weakly n-type or in p-type wafers, nanowire growth is inhibited. This difference allows selective growth in strongly n-type areas. The inhibited growth on weakly n-type and p-type wafers can be improved by applying stronger cathodic electrode potentials or by illuminating the growth area. The wires on n-Si show efficient electroluminescence covering the visible and extending into the ultraviolet spectral range.

Description

Copyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (R. Könenkamp, R. C. Word, M. Dosmailov, J. Meiss, A. Nadarajah, Selective growth of single-crystalline ZnO nanowires on doped Silicon. Journal of Applied Physics 102, 56103 (2007)) and may be found at (http://dx.doi.org/10.1063/1.2777133).

DOI

10.1063/1.2777133

Persistent Identifier

http://archives.pdx.edu/ds/psu/7256

Included in

Physics Commons

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