Published In

Applied Physics Letters

Document Type

Article

Publication Date

4-1-2007

Subjects

Hafnium compounds, Amorphous semiconductors, Silicon crystals -- Research

Abstract

The effects of rapid thermal annealing are reported here on the structure of 2 nm thick hafnium oxide films grown on silicon (100) substrates. The films grown by atomic layer deposition have a 1 nm SiO2 transition layer between silicon and the HfO2 layer. The amorphous structure of the as-deposited films is retained after annealing at 600°C. The HfO2 films crystallized into an orthorhombic phase with an out-of-plane texture after annealing at 800°C or higher. In contrast, films grown on thick amorphous SiO2 substrates crystallize without any texture. The authors attribute the texture of HfO2 on Si (100) to the role of interfacial SiO2 transition layer.

Description

This is the publisher's final pdf. Article appears in Applied Physics Letters (http://apl.aip.org/) and copyrighted (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

DOI

10.1063/1.2724925

Persistent Identifier

http://archives.pdx.edu/ds/psu/7281

Included in

Mathematics Commons

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