Textured Crystallization of Ultrathin Hafnium Oxide Films on Silicon Substrate
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The effects of rapid thermal annealing are reported here on the structure of 2 nm thick hafnium oxide films grown on silicon (100) substrates. The films grown by atomic layer deposition have a 1 nm SiO2 transition layer between silicon and the HfO2 layer. The amorphous structure of the as-deposited films is retained after annealing at 600°C. The HfO2 films crystallized into an orthorhombic phase with an out-of-plane texture after annealing at 800°C or higher. In contrast, films grown on thick amorphous SiO2 substrates crystallize without any texture. The authors attribute the texture of HfO2 on Si (100) to the role of interfacial SiO2 transition layer.