Sponsor
This work is supported by the State Key Research Development Program of China (2010CB833103), the National Natural Science Foundation of China (60976073, 11274201), and the Foundation for Outstanding Young Scientist in Shandong Province (BS2010CL036).
Published In
Nanoscale Research Letters
Document Type
Article
Publication Date
11-30-2012
Subjects
Ferromagnetic materials, Thin films -- Magnetic properties, Nanostructured materials
Abstract
(Sn, Fe)-codoped In₂O₃ epitaxial films were deposited on (111)-oriented Y-stabilized ZrO₂ substrates by pulsed laser deposition with constant Fe concentration and different Sn concentrations. The influence of Sn concentration on the crystal structure and properties of Fe-doped In₂O₃ ferromagnetic semiconductor films has been investigated systematically. Experimental results indicate that Sn doping can effectively reduce the surface roughness and suppresses breakup of the films into separated islands. At the same time, the optical band gap increases and the electrical properties improve correspondingly. However, although the carrier density increases dramatically with the Sn doping, no obvious change of the ferromagnetism is observed. This is explained by a modified bounded magnetic polaron model.
DOI
10.1186/1556-276X-7-661
Persistent Identifier
http://archives.pdx.edu/ds/psu/9373
Citation Details
Zhou, T., Wei, L., Xie, Y., Li, Q., Hu, G., Chen, Y., & ... Jiao, J. (2012). Effects of Sn doping on the morphology and properties of Fe-doped In₂O₃ epitaxial films.
Description
© 2012 Zhou et al.; licensee Springer. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.