Copper Thin-Film Dissolution/Precipitation Kinetics in Organic HF Containing Cleaning Solution

Authors

Nabil George Mistkawi, Portland State University
Makarem A. Hussein
Malgorzata Ziomek-Moroz, U.S. Department of Energy
Shankar B. Rananavare, Portland State UniversityFollow

Published In

Journal of The Electrochemical Society

Document Type

Article

Publication Date

2010

Subjects

Mass spectrometry, Electroforming, Surface chemistry

Abstract

The corrosion behavior of electrochemically deposited copper thin films in deaerated and non-deaerated commercial cleaning solution containing HF has been investigated. Thin-film copper dissolution and reaction kinetics were investigated by monitoring Cu²⁺ , employing inductively coupled plasma–mass spectroscopy, and the oxidation states of copper on Si wafer surface, employing X-ray photoelectron spectroscopy. It was determined that the reaction kinetics is first order with respect to both HF and oxygen concentrations. A kinetic scheme involving reduction of oxygen and oxidation of Cu⁰ and Cu¹⁺ is proposed, which is consistent with the experimentally determined reaction kinetic orders and the observed deposition of undesired copper residues on semiconductor wafers during the cleaning process.

Description

This is the publisher's final PDF. © The Electrochemical Society, Inc. 2010. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published here: http://jes.ecsdl.org/content/157/8/H801.abstract

DOI

10.1149/1.3446816

Persistent Identifier

http://archives.pdx.edu/ds/psu/11954

Citation Details

Nabil G. Mistkawi, Makarem A. Hussein, Malgorzata Ziomek-Moroz, and Shankar B. Rananavare, “Copper Thin-Film Dissolution/Precipitation Kinetics in Organic HF Containing Cleaning Solution,” J. Electrochem. Soc., 157(8), 801-805 (2010).