Published In

Applied Physics Letters

Document Type

Article

Publication Date

6-1-2003

Subjects

Nanowires, Transistors

Abstract

Fabrication and operation of a vertical nanowire field-effect transistor is reported. The device is prepared by growing vertical wires in the cylindrical pores of a polymer foil stack. The nanowirediameter is approximately 100 nm, the packing density up to 10⁸ cm⁻². The polymer foil stack consists of two polymer layers and an intermediate metal layer. Cylindrical holes are prepared in this stack by using fast ion irradiation and subsequent etching. Well-defined cylindrical openings with diameters between 50 and 150 nm are obtained. The semiconductor growth involves electrodeposition of the p-type quaternary compound CuSCN. Electrical measurements on first devices show transistor action with some gate leakage, which may be improved in future designs. The arrangement of inorganic device material embedded in soft polymer matrix is structurally robust, and the devices show low sensitivity to mechanical strain of the foil. Single electron effects may be expected in these devices, when the dimensions are further reduced.

Rights

© 2003 American Institute of Physics.

Description

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 82(26), 4782-4784 and may be found at https://doi.org/10.1063/1.1587258

*At the time of publication Rolf Könenkamp was affilated with Hahn-Meitner Institut Berlin

Locate the Document

https://doi.org/10.1063/1.1587258

DOI

10.1063/1.1587258

Persistent Identifier

http://archives.pdx.edu/ds/psu/7623

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