Published In
Applied Physics Letters
Document Type
Article
Publication Date
12-1-2004
Subjects
Nanowires, Light emitting diodes, Particles (Nuclear physics)
Abstract
We report room-temperature, white-color electroluminescence in vertically oriented ZnO nanowires. Excitonic luminescence around 380 nm is observed as a shoulder on a broader defect-related band covering all of the visible range and centered at 620 nm. The ZnO nanowires are grown in a low-temperature process on SnO2-coated glass substrates, employing a technique that is suitable for large-area applications. The nanowires are robustly encapsulated in a thin polystyrene film deposited from high-molecular-weight solutions. Electron injection occurs through the transparent SnO2 layer, while hole injection is mediated by a p-doped polymer and an evaporated Au contact. Stable device operation is observed at ambient conditions on the time scale of 1 h.
Rights
© 2004 American Institute of Physics.
Locate the Document
DOI
10.1063/1.1836873
Persistent Identifier
http://archives.pdx.edu/ds/psu/7257
Citation Details
Könenkamp, R. R., Word, R. C., & Schlegel, C. C. (2004). Vertical nanowire light-emitting diode. Applied Physics Letters, 85(24), 6004-6006.
Description
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 85(24), 6004-6006 and may be found at https://doi.org/10.1063/1.1836873