Nanowire Solar Cell Sensitized with II-VI Quantum Dot Layer
Sponsor
This research was supported by the Department of Energy Basic Sciences and the Oregon Nano and Microtechnologies Institute.
Published In
Materials Research Society Symposium Proceedings
Document Type
Citation
Publication Date
1-1-2008
Subjects
Quantum dots, Nanowires, Solar cells
Abstract
We report first results on a new solar cell consisting of a p-i-n hetero-junction formed between n-type transparent nanowires, undoped semiconductor quantum dots and a wide bandgap p-type polymer layer. The overall structure is SnO2/ZnO/CdSe/MEH-PPV with MEH-PPV standing for poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene]. Microscopic studies on the structure of the quantum dot layer before and after anneal indicates a morphology change from a quantum dot assembly to a continuous polycrystalline thin film. The charge transfer between the absorber layer and the adjacent layers is improved as the layer is converted from the quantum dot assembly towards a polycrystalline thin film structure. In optimized devices the spectral photocurrent response shows contributions from the ZnO, the CdSe and the MEH-PPV, covering the spectral range from 300 to 700nm with an external quantum efficiency between 30 and 40%. The overall energy conversion efficiency approaches 1%.
Rights
Copyright © Materials Research Society 2008
Locate the Document
DOI
10.1557/PROC-1080-O15-23
Persistent Identifier
http://archives.pdx.edu/ds/psu/7255
Citation Details
Nadarajah, A., Word, R., VanSant, K., and Könenkamp, R. Nanowire Solar Cell Sensitized with II-VI Quantum Dots. Mater. Res. Soc. Symp. Proc. Vol. 1080 - O15-23 (2008)