Document Type

Patent

Publication Date

1-6-2009

Subjects

Scanning probe microscopy -- Data processing, Metrology -- Standards, Image processing, Crystals -- Structure

Abstract

Nanometrology device standards and methods for fabricating and using such devices in conjunction With scanning probe microscopes are described. The fabrication methods comprise: (1) epitaxial growth that produces nanometer sized islands of knoWn morphology, structural, morphological and chemical stability in typical nanometrology environments, and large height-to-width nano-island aspect ratios, and (2) marking suitable crystallographic directions on the device for alignment With a scanning direction.

Description

Patent number: US 7,472.576 B1

Persistent Identifier

http://archives.pdx.edu/ds/psu/16112

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