Published In
Electronics
Document Type
Article
Publication Date
3-30-2017
Subjects
Semiconductor films -- Design and construction, Semiconductor films -- Structure, Compound semiconductors, Chalcogenides
Abstract
Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of y-InSe and Sb2Se3 can be grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman), crystalline (X-ray diffraction), and composition (XPS) properties of these films have been measured and compared to those reported for exfoliated films and have been found to be similar. Heterostructures composed of a layer of y-InSe (intrinsically n-type) followed by a layer of Sb2Se3 (intrinsically p-type) that display diode characteristics were also grown.
DOI
10.3390/electronics6020027
Persistent Identifier
http://archives.pdx.edu/ds/psu/20284
Citation Details
Browning, R., Kuperman, N., Moon, B., & Solanki, R. (2017). Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure. Electronics, 6(2), 27.
Description
© 2017 by the authors. Licensee MDPI, Basel, Switzerland.
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).