Topological Insulator Bi2Se3 Films on Silicon Substrates

Authors

Paul Plachinda, Portland State University
Michael Hopkins, Portland State UniversityFollow
Sergei Rouvimov, University of Notre DameFollow
Raj Solanski, Portland State University

Published In

Journal of Electronic Materials

Document Type

Citation

Publication Date

3-1-2020

Abstract

We have employed atomic layer deposition to produce uniform films of Bi2Se3Bi2Se3, which is a 3D topological insulator (TI), over 5 cm ×× 5 cm SiO2SiO2-coated Si substrates. The crystalline properties of the films were characterized via Raman spectroscopy, x-ray diffraction, cross-sectional transmission microscopy, and atomic force microscopy, which confirmed the high quality of the films. The TI properties were examined using Hall bridge structures and recording magnetoresistance at 1.9 K. A weak anti-localization effect was observed at low field, from which a phase coherent length of 242 nm and prefactor αα value of 1 were determined, indicating desirable topological properties. This approach for film growth provides a path for integrating a 3D topological insulator with silicon integrated circuit technology.

Description

© 2020 Springer Nature Switzerland AG.

Locate the Document

http://doi.org/10.1007/s11664-019-07899-9

DOI

10.1007/s11664-019-07899-9

Persistent Identifier

https://archives.pdx.edu/ds/psu/32673

Citation Details

Plachinda, P., Hopkins, M., Rouvimov, S. et al. Topological Insulator Bi2Se3 Films on Silicon Substrates. Journal of Elec Materi 49, 2191–2196 (2020). https://doi.org/10.1007/s11664-019-07899-9