Wavelet Analysis of RTS Noise in CMOS Image Sensors Irradiated with High-Energy Photons

Authors

Ben Hendrickson, Portland State University
Ralf Widenhorn, Portland State UniversityFollow
Morley Blouke, Portland State University
Denis Heidtmann, Portland State University
Erik Bodegom, Portland State UniversityFollow

Published In

Ieee Transactions on Nuclear Science

Document Type

Citation

Publication Date

7-1-2020

Abstract

This article explores the phenomenon of dark current random telegraph signal (DC-RTS) noise in commercial off-the-shelf CMOS image sensors. Five sensors were irradiated with high-energy photons to a variety of doses and analyzed with a wavelet-based signal reconstruction algorithm. The algorithm is explained in detail and the radiation effects on individual pixels are discussed. Finally, the production rate of RTS pixels as a function of dose is explored, providing information on the underlying defect structure responsible for this noise source.

Description

Copyright © 2020, IEEE

Locate the Document

https://doi.org/10.1109/TNS.2020.2995309

DOI

10.1109/TNS.2020.2995309

Persistent Identifier

https://archives.pdx.edu/ds/psu/34622

Citation Details

Hendrickson, B., Widenhorn, R., Blouke, M., Heidtmann, D., & Bodegom, E. (2020). Wavelet Analysis of RTS Noise in CMOS Image Sensors Irradiated With High-Energy Photons. IEEE Transactions on Nuclear Science, 67(7), 1732–1737. https://doi.org/10.1109/TNS.2020.2995309