Published In
Applied Nano
Document Type
Article
Publication Date
2-20-2023
Subjects
Topological semimetal, Magnetoresistance, Superconductivity, ALD
Abstract
MoP is a topological semimetal which has drawn attention due to its unique electrical and optical properties resulting from massless electrons. In order to utilize these properties for practical applications, it is necessary to develop a technique to produce high-quality, large-scale thin films of this 2D material. We report below our initial results of growth of MoP thin films using atomic layer deposition (ALD), where the film grows layer-by-layer. These films were grown on 5 cm × 5 cm silicon oxide coated Si wafers. Resistivity versus temperature measurements show that these films are metallic and includes a partial superconducting phase. The magnetoresistances of both the longitudinal and Hall currents measured at 1.8 K show a strong effect of the magnetic field on the resistivity. Density functional theory was employed to determine the lattice constants of the MoP crystal. These parameters were in good agreement with those obtained from the Rietveld fit to the XRD spectrum of the films.
Rights
© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
Locate the Document
DOI
10.3390/applnano4010003
Persistent Identifier
https://archives.pdx.edu/ds/psu/39722
Citation Details
Browning, R., Plachinda, P., & Solanki, R. (2023). Thin Film Deposition of MoP, a Topological Semimetal. Applied Nano, 4(1), 38-44.