Nanoparticles -- Optical properties, Nanostructured materials -- Technological innovations, Semiconductors -- Defects -- Analysis
We present a hybrid nano-lithographic approach to minimizes the effects of line edge roughness and shot noise in nano-hole patterning by reflowing photoresist polymers around the nanoparticles deposited using self-assembly and simple etch chemistries. The method extends the transistor contact holes patterning limits to below 20 nm.
S. Rananavare and K. M. Morakinyo, J. Mater. Chem. C, 2014, Reducing the Effects of Shot Noise Using Nanoparticles.