Document Type

Post-Print

Publication Date

11-2014

Subjects

Nanoparticles -- Optical properties, Nanostructured materials -- Technological innovations, Semiconductors -- Defects -- Analysis

Abstract

We present a hybrid nano-lithographic approach to minimizes the effects of line edge roughness and shot noise in nano-hole patterning by reflowing photoresist polymers around the nanoparticles deposited using self-assembly and simple etch chemistries. The method extends the transistor contact holes patterning limits to below 20 nm.

Description

This is an Author's Accepted Manuscript of an article published in Journal of Materials Chemistry C and is available online at: http://pubs.rsc.org/en/content/articlelanding/2014/tc/c4tc01339e#!divAbstract

DOI

10.1039/C4TC01339E

Persistent Identifier

http://archives.pdx.edu/ds/psu/12950

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