Date of Award

2015

Document Type

Thesis

Department

Physics

First Advisor

Rajendra Solanki

Subjects

Metal oxide semiconductors -- Design and construction, Metal oxide semiconductors -- Testing, Capacitors

DOI

10.15760/honors.189

Abstract

Transistors form the backbone of digital devices, allowing for amplification and digital "switching" of electrical signals. One of the simplest devices is the Metal-Oxide-Semiconductor Capacitor (MOSCAP). The MOSCAP is analogous to a parallel plate capacitor with the Si wafer and metal layer corresponding to the positive and negative plates, and the oxide layer corresponding to the dielectric material. During the fabrication process it is likely that trapped charge impurities will become incorporated into the oxide layer of the MOSCAP. This thesis project will examine the effects of these charges on the capacitance and voltage characteristics of a MOSCAP.

Comments

An undergraduate honors thesis submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in University Honors and Physics

Persistent Identifier

http://archives.pdx.edu/ds/psu/15412

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