First Advisor
Rajendra Solanki
Date of Award
2015
Document Type
Thesis
Degree Name
Bachelor of Science (B.S.) in Physics and University Honors
Department
Physics
Subjects
Metal oxide semiconductors -- Design and construction, Metal oxide semiconductors -- Testing, Capacitors
DOI
10.15760/honors.189
Abstract
Transistors form the backbone of digital devices, allowing for amplification and digital "switching" of electrical signals. One of the simplest devices is the Metal-Oxide-Semiconductor Capacitor (MOSCAP). The MOSCAP is analogous to a parallel plate capacitor with the Si wafer and metal layer corresponding to the positive and negative plates, and the oxide layer corresponding to the dielectric material. During the fabrication process it is likely that trapped charge impurities will become incorporated into the oxide layer of the MOSCAP. This thesis project will examine the effects of these charges on the capacitance and voltage characteristics of a MOSCAP.
Rights
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Persistent Identifier
http://archives.pdx.edu/ds/psu/15412
Recommended Citation
George, August, "MOSCAP Oxide Charges" (2015). University Honors Theses. Paper 139.
https://doi.org/10.15760/honors.189