Synthesis of Large-Scale 2-D MoS2 Atomic Layers by Hydrogen-Free and Promoter-Free Chemical Vapor Deposition

Authors

Hung Nguyen, Washington State University
Chih-Fang Huang, National Tsing Hua University
Weijun Luo, University of British Columbia
Guangrui (Maggie) Xia, University of British Columbia
Zhiqiang Chen, Portland State UniversityFollow
Zhiqiang Li, NanometricsFollow
Christopher Raymond, Nanometrics
David Doyle, Nanometrics
Feng Zhao, Washington State UniversityFollow

Published In

Materials Letters

Document Type

Citation

Publication Date

4-2016

Abstract

As one of the two-dimensional (2-D) transition metal dichalcogenides, atomically thin molybdenum disulfide (MoS₂) has attracted significant attention and research interests for micro and nanoelectronic applications. Significant efforts have been made to develop different approaches in order to obtain atomic layer MoS₂, such as exfoliation, chemical synthesis, and physical or chemical vapor deposition (CVD) processes. In this paper, we report a hydrogen-free and promoter-free CVD growth to synthesize large-area MoS₂ atomic layers. A variety of techniques including optical microscopy (OM), atomic force microscopy (AFM), photoluminescence (PL) mapping, Raman and x-ray photoelectron spectroscopy (XPS), high resolution electron microscopy (HREM) and scanning transmission electron microscopy (STEM) were applied to characterize the film quality, uniformity and layer numbers. High quality centimeter-sized MoS₂ atomic layers were demonstrated, which form a foundation to develop wafer-sized material platform for device fabrication and production.

Locate the Document

http://dx.doi.org/10.1016/j.matlet.2015.12.068

DOI

10.1016/j.matlet.2015.12.068

Persistent Identifier

https://archives.pdx.edu/ds/psu/29421

Citation Details

Nguyen, H., Huang, C. F., Luo, W., Xia, G. M., Chen, Z., Li, Z., ... & Zhao, F. (2016). Synthesis of large-scale 2-D MoS 2 atomic layers by hydrogen-free and promoter-free chemical vapor deposition. Materials Letters, 168, 1-4.