Creation and Annihilation of Charge Traps in Silicon Nanocrystals: Experimental Visualization and Spectroscopy
Published In
The Journal of Physical Chemistry Letters
Document Type
Citation
Publication Date
1-2018
Subjects
Nanocrytals -- research
Abstract
Recent studies have shown the presence of an amorphous surface layer in nominally crystalline silicon nanocrystals (SiNCs) produced by some of the most common synthetic techniques. The amorphous surface layer can serve as a source of deep charge traps, which can dramatically affect the electronic and photophysical properties of SiNCs. We present results of a scanning tunneling microscopy/scanning tunneling spectroscopy (STM/STS) study of individual intragap states observed on the surfaces of hydrogen-passivated SiNCs deposited on the Au(111) surface. STS measurements show that intragap states can be formed reversibly when appropriate voltage–current pulses are applied to individual SiNCs. Analysis of STS spectra suggests that the observed intragap states are formed via self-trapping of charge carriers injected into SiNCs from the STM tip. Our results provide a direct visualization of the charge trap formation in individual SiNCs, a level of detail which until now had been achieved only in theoretical studies.
Rights
Copyright © 2018 American Chemical Society
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DOI
10.1021/acs.jpclett.7b03299
Persistent Identifier
https://archives.pdx.edu/ds/psu/34572
Citation Details
Kislitsyn, D. A., Mills, J. M., Chiu, S. K., Taber, B. N., Barnes, J. D., Gervasi, C. F., ... & Nazin, G. V. (2018). Creation and annihilation of charge traps in silicon nanocrystals: experimental visualization and spectroscopy. The journal of physical chemistry letters, 9(4), 710-716.