Document Type

Post-Print

Publication Date

8-2011

Subjects

Nanowires, Photoluminescence, Wide gap semiconductors

Abstract

The extension of 193nm technology is desirable due to the magnitude of past investments. Since “optical” advancements are increasingly difficult, there is a strong demand for more sophisticated “smart” resists to increase pattern density. Many studies have proven double pattering can be used for the extension of 193nm lithography. In this study, a new class of two stage photo base generators will be introduced along with the synthetic procedure and molecular characterization. The characterizations for exposure study by NMR have shown typical characteristics to stage decomposition under the exposure of 254nm light as well as promising pitch division. GCMS was utilized to indicate the formation of photo base and major products from secondary photo chemical reaction. Kinetic simulation was also taken into account to show the consistence of proposed mechanism.

Description

This is an Author's Accepted Manuscript of an article published in Nanotechnology. © 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. This article was published in 2011 11th IEEE Conference on Nanotechnology (IEEE-NANO) and is available online at: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6144469

The article was published under the title "Photochemical Reactivity of Bis-Carbamate Photobase Generators"

DOI

10.1109/NANO.2011.6144603

Persistent Identifier

http://archives.pdx.edu/ds/psu/11959

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