Nanowires, Photoluminescence, Wide gap semiconductors
The extension of 193nm technology is desirable due to the magnitude of past investments. Since “optical” advancements are increasingly difficult, there is a strong demand for more sophisticated “smart” resists to increase pattern density. Many studies have proven double pattering can be used for the extension of 193nm lithography. In this study, a new class of two stage photo base generators will be introduced along with the synthetic procedure and molecular characterization. The characterizations for exposure study by NMR have shown typical characteristics to stage decomposition under the exposure of 254nm light as well as promising pitch division. GCMS was utilized to indicate the formation of photo base and major products from secondary photo chemical reaction. Kinetic simulation was also taken into account to show the consistence of proposed mechanism.
Tran, Hoang and Rananavare, Shankar B., "Bis Photobase Generator" (2011). Chemistry Faculty Publications and Presentations. 81.