Synthesis and Characterization of N- and P- Doped Tin Oxide Nanowires

Authors

Hoang Tran, Portland State UniversityFollow
Shankar B. Rananavare, Portland State UniversityFollow

Document Type

Post-Print

Publication Date

8-2011

Subjects

Photoluminescence, Semiconductor doping, Wide gap semiconductors, Nanowires

Abstract

Bulk-scale synthetic methods for preparing doped tin oxide (SnO₂) nanowires (NWs) are presented. n-and p-doping is achieved through insertion of Antimony and Lithium in tin oxide lattice, respectively. We also present a comparison of the structural and optical properties of SnO₂ nanoparticles (NPs), and SnO₂ NWs. Both n-type and p- type NWs display a characteristic red shift in their photoluminescence (PL) spectra. Surface plasmons observed in these systems imply high carrier concentrations. These corrosion resistant materials are useful in fabricating ultra-sensitive gas detectors and transparent electronics.

Description

This is an Author's Accepted Manuscript of an article published in Nanotechnology. © 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. This article was published in 2011 11th IEEE Conference on Nanotechnology (IEEE-NANO) and is available online at: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6144603

DOI

10.1109/NANO.2011.6144603

Persistent Identifier

http://archives.pdx.edu/ds/psu/12027

Citation Details

Tran, Hoang and Rananavare, Shankar B., "Synthesis and Characterization of N- and P- Doped Tin Oxide Nanowires" (2011). Chemistry Faculty Publications and Presentations. 85.
http://archives.pdx.edu/ds/psu/12027