Published In

Applied Physics Letters

Document Type

Article

Publication Date

9-1-1970

Subjects

Semiconductor lasers, Xenon lasers

Abstract

In lasers employing high‐gain narrow‐linewidth transitions the theory predicts major departures of the mode‐splitting frequencies from their low‐gain values as well as a new type of mode splitting. The first of these effects consisting of a reduction by a factor of 2.5 of the mode splitting in a xenon 3.51‐μ laser is observed experimentally.

Description

This is the publisher's final PDF. Article appears in Applied Physics Letters (http://apl.aip.org/) and is copyrighted 1970 by the American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Persistent Identifier

http://archives.pdx.edu/ds/psu/8204

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