Investigation of Scaling of InSb MOSFETs Through Drift–Diffusion Simulation
Published In
Solid-State Electronics
Document Type
Citation
Publication Date
1-1-2006
Abstract
Models needed for drift–diffusion simulation of InSb MOSFETs in commercially available simulator are presented and applied to the problem of scaling of the exclusion/extraction InSb MOSFETs. Non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained and modeled. Leakage current and maximum unity current gain frequency of the exclusion/extraction MOSFET are examined and its scaling properties down to 0.15 lm are analyzed. Because of its high mobility and saturation velocity, InSb shows promise as a material for THz active devices operating at very low voltages, despite its low bandgap and resulting leakage currents.
DOI
10.1016/j.sse.2006.07.008
Persistent Identifier
https://archives.pdx.edu/ds/psu/25865
Citation Details
Pejcinovic, Branimir and Sijercic, Edin, "Investigation of Scaling of InSb MOSFETs Through Drift–Diffusion Simulation" (2006). Electrical and Computer Engineering Faculty Publications and Presentations. 432.
https://archives.pdx.edu/ds/psu/25865