Investigation of Scaling of InSb MOSFETs Through Drift–Diffusion Simulation
Published In
Solid-State Electronics
Document Type
Citation
Publication Date
1-1-2006
Abstract
Models needed for drift–diffusion simulation of InSb MOSFETs in commercially available simulator are presented and applied to the problem of scaling of the exclusion/extraction InSb MOSFETs. Non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained and modeled. Leakage current and maximum unity current gain frequency of the exclusion/extraction MOSFET are examined and its scaling properties down to 0.15 lm are analyzed. Because of its high mobility and saturation velocity, InSb shows promise as a material for THz active devices operating at very low voltages, despite its low bandgap and resulting leakage currents.
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DOI
10.1016/j.sse.2006.07.008
Persistent Identifier
https://archives.pdx.edu/ds/psu/25865
Citation Details
Sijerčić, E., & Pejčinović, B. (2006). Investigation of scaling of InSb MOSFETs through drift–diffusion simulation. Solid-state electronics, 50(9-10), 1634-1639.