Atomic Layer Deposition of 2-Dimensional, Semiconducting SnSe Thin Films

Authors

Shakila Afrin, Portland State UniversityFollow
Neal Kuperman, Portland State University
Raj Solanki, Portland State UniversityFollow

Published In

2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)

Document Type

Citation

Publication Date

1-10-2019

Abstract

Tin selenide (SnSe) is a two-dimensional, layered metal chalcogenide material. It has a direct band gap, hence has a great potential for next generation of opto- and photovoltaic devices. Uniform, smooth and high quality SnSe thin films were grown over large areas (5cm x 5cm) Si/SiO 2 substrates using Atomic Layer Deposition (ALD). Films were grown over a temperature range of 350°C to 450°C, which exhibit p- type semiconductor characteristics. Structural and optical properties of the as-grown films were investigated using X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). These analyses show growth of 2 dimensional, orthorhombic phase films. Back-gated transistors show p-type conductance, with an average hole mobility of 10 cm 2 /V.s and I on /I off ratio of ~10 5 . Magnetic analysis shows a paramagnetic behavior.

Description

© Copyright 2019 IEEE - All rights reserved.

Locate the Document

https://doi.org/10.1109/NMDC.2018.8605911

DOI

10.1109/NMDC.2018.8605911

Persistent Identifier

https://archives.pdx.edu/ds/psu/29050

Citation Details

S. Afrin, N. Kuperman and R. Solanki, "Atomic layer Deposition of 2-dimensional, Semiconducting SnSe Thin Films," 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), Portland, OR, 2018, pp. 1-4.