Atomic Layer Deposition of 2-Dimensional, Semiconducting SnSe Thin Films
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)
Tin selenide (SnSe) is a two-dimensional, layered metal chalcogenide material. It has a direct band gap, hence has a great potential for next generation of opto- and photovoltaic devices. Uniform, smooth and high quality SnSe thin films were grown over large areas (5cm x 5cm) Si/SiO 2 substrates using Atomic Layer Deposition (ALD). Films were grown over a temperature range of 350°C to 450°C, which exhibit p- type semiconductor characteristics. Structural and optical properties of the as-grown films were investigated using X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). These analyses show growth of 2 dimensional, orthorhombic phase films. Back-gated transistors show p-type conductance, with an average hole mobility of 10 cm 2 /V.s and I on /I off ratio of ~10 5 . Magnetic analysis shows a paramagnetic behavior.
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S. Afrin, N. Kuperman and R. Solanki, "Atomic layer Deposition of 2-dimensional, Semiconducting SnSe Thin Films," 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), Portland, OR, 2018, pp. 1-4.