Sponsor
This work was supported in part by a grant from the California Microelectronics Innovation and Computer Research Opportunities (MICRO) Program
Published In
Journal of Applied Physics
Document Type
Article
Publication Date
7-1-1984
Subjects
Semiconductor lasers -- Power supply -- Mathematical models
Abstract
The basic aspects of power calculations for high‐gain semiconductor lasers are briefly reviewed, and a straightforward one‐dimensional model is described. The relative importance of spontaneous emission, distributed losses, band‐to‐band absorption, and high single‐pass gain are investigated in detail.
Persistent Identifier
http://archives.pdx.edu/ds/psu/8198
Citation Details
Wilcox, Jaroslava Z., Casperson, Lee W. (1984). Power characteristics of single‐mode semiconductor lasers. Journal of Applied Physics, 56 (1), 57-64.
Description
This is the publisher's final pdf. Article appears in Journal of Applied Physics (http://jap.aip.org/) and is copyrighted 1984 by the American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.