First Advisor

James Morris

Date of Award

8-17-2017

Document Type

Thesis

Degree Name

Bachelor of Science (B.S.) in Electrical Engineering and University Honors

Department

Electrical and Computer Engineering

Subjects

Carbon nanotubes -- Thermal properties, Carbon nanotubes -- Electric properties, Interconnects (Integrated circuit technology), Three-dimensional integrated circuits

DOI

10.15760/honors.471

Abstract

This paper outlines the electrical and thermal properties of carbon nanotubes (CNT) as a potential replacement for Copper (Cu) in through silicon vias (TSV). Cu has undesirable thermal properties, and CNTs could resolve issues that high density interconnects experience under high thermal loads around 100 C. Most notably, the coefficient of thermal expansion for CNTs is two orders of magnitude lesser than Cu [1]. The electrical and mechanical properties of CNTs under a high frequency load of 1 THz, and high thermal load of 100 C are simulated with ABAQUS 6.16. There is no observable skin effect modelled for the Cu or Single-Walled Carbon Nanotube (SWCNT) wires simulated in this paper.

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In Copyright. URI: http://rightsstatements.org/vocab/InC/1.0/ This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).

Persistent Identifier

http://archives.pdx.edu/ds/psu/21082

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