Static Fatigue Lifetime of Optical Fibers Assessed Using Boltzmann-Arrhenius-Zhurkov (BAZ) Model
Journal of Materials Science: Materials in Electronics
The recently suggested probabilistic design-for-reliability (PDfR) concept and particularly its physically meaningful and flexible Boltzmann–Arrhenius–Zhurkov (BAZ) model, can be effectively employed as an attractive replacement of the widely used today purely empirical and physically unsubstantiated power law relationship for assessing the static fatigue (delayed fracture) lifetime of optical silica fibers. In this analysis the BAZ model is employed to estimate the static fatigue lifetime of an optical silica fiber under the combined action of tensile loading and an elevated temperature. The PDfR concept has its experimental basis in the highly-focused and highly-cost-effective failure-oriented accelerated testing (FOAT). Accordingly, it is shown how the PDfR concept, BAZ model and FOAT data can be effectively used, when there is a need to assess the long-term tensile strength (static fatigue life) of a coated optical fiber subjected to the combined action of tensile loading and elevated temperature. Although the role of elevated humidity might be insignificant owing to the elevated temperature conditions, this role can be accounted for, if there is a need for that, as well, by using multi-parametric BAZ model. Since the principle of superposition does not work in reliability engineering, all the three stressors, namely, the elevated temperature, tensile stress and relative humidity, should be applied concurrently to the specimen under test, and their coupling, if any, should and could be considered by the FOAT based on the BAZ model. The numerical example is carried out, however, for the case when only the elevated temperature and tensile stress are applied. The results of the analysis can be employed in the design and testing of optical silica fibers.
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Suhir, E. 2017. Static fatigue lifetime of optical fibers assessed using Boltzmann-Arrhenius-Zhurkov (BAZ) model. Journal of Materials Science: Materials in Electronics, 28(16):11689-11694.